Read e-book online Semiconductor Nanostructures for Optoelectronic Devices: PDF

By Heon-Jin Choi (auth.), Gyu-Chul Yi (eds.)

ISBN-10: 3642224792

ISBN-13: 9783642224799

This e-book offers the fabrication of optoelectronic nanodevices. The constructions thought of are nanowires, nanorods, hybrid semiconductor nanostructures, broad bandgap nanostructures for noticeable mild emitters and graphene. The machine functions of those constructions are generally defined. The ebook offers additionally with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

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By Heon-Jin Choi (auth.), Gyu-Chul Yi (eds.)

ISBN-10: 3642224792

ISBN-13: 9783642224799

This e-book offers the fabrication of optoelectronic nanodevices. The constructions thought of are nanowires, nanorods, hybrid semiconductor nanostructures, broad bandgap nanostructures for noticeable mild emitters and graphene. The machine functions of those constructions are generally defined. The ebook offers additionally with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

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Read Online or Download Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications PDF

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Get Semiconductor Nanostructures for Optoelectronic Devices: PDF

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M. M. R. E. M. Habib, Nano Lett. 9, 4494 (2009) 21. Y. Wang, V. Schmidt, S. Senz, U. Gosele, Nat. Nanotechnol. 1, 186 (2006) 22. X. Gao, Y. L. Wang, Nano Lett. 3, 1315 (2003) 23. J. -J. Hong, S. -C. Yi, B. Chon, T. -W. -S. Lee, Appl. Phys. Lett. 89, 043124–1 (2006) 24. B. Mandl, J. Stangl, E. A. Zakharov, K. W. Dey, L. Samuelson, G. Bauer, K. Deppert, A. Mikkelsen, Nano Lett. 10, 4443 (2010) 25. L. L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. K. L. S. Goorsky, S. F. Hicks, Nano Lett.

Second, the MOVPE with computer-controlled reactant gas-delivery system makes it possible to control layer thicknesses in a sub-nanometer scale; this is highly advantageous for growing composition-modulated nanorod heterostructures with sharply defined interfaces [4, 6, 29]. In nanorod heterostructures of wide band gap materials, such as ZnO and GaN, the QW layer thickness must be smaller than a few nanometers for effective quantum confinement of charge carriers, which can be achieved with the MOVPE system [4].

L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. K. L. S. Goorsky, S. F. Hicks, Nano Lett. 9, 2223 (2009) 26. B. F. Steigmeier, Appl. Phys. Lett. 67, 2370 (1995) 27. C. P. O’Reilly, Physica E 32, 341 (2006) 28. Y. Wu, Y. Cui, L. J. C. M. Lieber, Nano Lett. 4, 433 (2004) 29. J. Goldberger, R. He, Y. Zhang, S. Lee, H. -J. Choi, P. Yang, Nature 422, 599 (2003) 30. S. Gudiksen, J. M. Lieber, J. Phys. Chem. B 106, 4036 (2002) 31. X. Wang, Y. J. L. Wang, J. Phys. Chem. B 108, 8773 (2004) 32.

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Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications by Heon-Jin Choi (auth.), Gyu-Chul Yi (eds.)


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