By D. J. Fisher
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Additional resources for A Directory of Arrhenius Parameters: Non-metals
0(eV)/kT] Defect and Diffusion Forum Vol. Wolfstirn: Journal of Applied Physics, 1962, 33, 2507-14  GaAs: Mn Diffusion Radioactive 54Mn was deposited onto the surface of Czochralski-type material which was doped with Zn, or n-type material which was doped with Sn. The samples were annealed in the presence of As at 950 to 1100C. The profiles were determined by measuring the γ activity. The results indicated that diffusion in p-type material was faster than in lightly-doped material. Skoryatina: Fizika i Tekhnika Poluprovodnikov, 1986, 20, 1877-80.
Cardona: Applied Physics Letters, 1999, 74, 4951  GaAs: Ga Diffusion Isotopically controlled heterostructures were used to study Ga self-diffusion by using secondary-ion mass spectrometry. This approach produced a near-ideal random walk situation that was free of perturbations arising from electric fields, mechanical Defect and Diffusion Forum Vol. 355 29 stresses, or chemical potentials. 24(eV)/kT] over 6 orders of magnitude, at 800 to 1225C, under As-rich conditions. Cardona: Physical Review Letters, 1996, 76, 2342-5  GaAs: Ga Diffusion The diffusion of Cd into single crystals was investigated at 756 to 1201C.
355 53 A radiotracer technique was used to study the diffusion of 54Mn. Khodakov: Fizika Tverdogo Tela, 1972, 14, 3072-4  HgTe: Sn Diffusion Serial sectioning was used to study the diffusion of 123Sn in monocrystalline material with a carrier concentration of about 1018/cm3. 02. Zaitov: Fizika Tverdogo Tela, 1971, 13, 278-9  HgTe: Te Diffusion Monocrystalline Hg-saturated material was studied at 473 to 616K. 14(eV)/kT] for slow diffusion via a lattice-site substitution mechanism.
A Directory of Arrhenius Parameters: Non-metals by D. J. Fisher